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onsemi FDC6561AN

Part No.:
FDC6561AN
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET 2N-CH 30V 2.5A SSOT6
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FDC6561AN Information

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.5A
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Power - Max:
700mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SuperSOT™-6
Image FDC6561AN FDC6561AN-NB5S007A
Part Number FDC6561AN FDC6561AN-NB5S007A
Manufacturer onsemi onsemi
Series PowerTrench® -
Package/Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 2.5A 2.5A (Ta)
Rds On (Max) @ Id, Vgs 95mOhm @ 2.5A, 10V 95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V 220pF @ 15V
Power - Max 700mW 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
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