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onsemi FDC6506P-NB4S006A

Part No.:
FDC6506P-NB4S006A
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
DUAL P-CHANNEL POWERTRENCH MOSFE
Quantity:

Unit Price:$0

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FDC6506P-NB4S006A Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
PowerTrench™
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Rds On (Max) @ Id, Vgs:
170mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 15V
Power - Max:
960mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-23-6
Image FDC6506P FDC6506P-NB4S006A
Part Number FDC6506P FDC6506P-NB4S006A
Manufacturer onsemi onsemi
Series PowerTrench® PowerTrench™
Package/Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR) Bulk
Product Status Obsolete Discontinued at Digi-Key
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual) 2 P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 1.8A 1.8A (Ta)
Rds On (Max) @ Id, Vgs 170mOhm @ 1.8A, 10V 170mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 10V 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V 190pF @ 15V
Power - Max 700mW 960mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 TSOT-23-6
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