EPC EPC2108

Product attributes

Attribute value

Manufacturer:

EPC

Series:

eGaN®

Package/Case:

9-VFBGA

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

GaNFET (Gallium Nitride)

Configuration:

3 N-Channel (Half Bridge + Synchronous Bootstrap)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V, 100V

Current - Continuous Drain (Id) @ 25°C:

1.7A, 500mA

Rds On (Max) @ Id, Vgs:

190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 100µA, 2.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:

0.22nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

22pF @ 30V, 7pF @ 30V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

9-BGA (1.35x1.35)