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EPC EPC2102

Part No.:
EPC2102
Manufacturer:
EPC
Category:
FET, MOSFET Arrays
Package:
Die
Description:
MOSFET 2N-CH 60V 23A DIE
Quantity:

Unit Price:$0

Ext Price:$0

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EPC2102 Information

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Product attributes
Attribute value
Manufacturer:
EPC
Series:
eGaN®
Package/Case:
Die
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
GaNFET (Gallium Nitride)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
23A
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs:
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
830pF @ 30V
Power - Max:
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Image EPC2102 EPC2102ENGRT
Part Number EPC2102 EPC2102ENGRT
Manufacturer EPC EPC
Series eGaN® eGaN®
Package/Case Die Die
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Discontinued at Digi-Key
Technology GaNFET (Gallium Nitride) GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 23A 23A (Tj)
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V 830pF @ 30V
Power - Max - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package Die Die
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