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Diodes Incorporated DMT8012LFG-7

Part No.:
DMT8012LFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Description:
MOSFET N-CH 80V PWRDI3333
Quantity:

Unit Price:$0

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DMT8012LFG-7 Information

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Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1949 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8
Image DMT8012LFG-7 DMT8012LFG-13
Part Number DMT8012LFG-7 DMT8012LFG-13
Manufacturer Diodes Incorporated Diodes Incorporated
Series - -
Package/Case 8-PowerVDFN 8-PowerVDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 35A (Tc) 9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 12A, 10V 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1949 pF @ 40 V 1949 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta), 30W (Tc) 2.2W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package POWERDI3333-8 POWERDI3333-8
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