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Diodes Incorporated DMN2005UPS-13

Part No.:
DMN2005UPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET N-CH 20V 20A POWERDI5060
Quantity:

Unit Price:$0

Ext Price:$0

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DMN2005UPS-13 Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
142 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
5337 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8
Image DMN2005UPS-13
Part Number DMN2005UPS-13
Manufacturer Diodes Incorporated
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5337 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8
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