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Diodes Incorporated DMG6602SVTX-7

Part No.:
DMG6602SVTX-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET N/P-CH 30V 3.4A TSOT26
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DMG6602SVTX-7 Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 15V, 420pF @ 15V
Power - Max:
840mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26
Image DMG6602SVTX-7
Part Number DMG6602SVTX-7
Manufacturer Diodes Incorporated
Series -
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V, 420pF @ 15V
Power - Max 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSOT-26
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