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Texas Instruments CSD88599Q5DC

Part No.:
CSD88599Q5DC
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Package:
22-PowerTFDFN
Description:
MOSFET 2N-CH 60V 22VSON-CLIP
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CSD88599Q5DC Information

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Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
22-PowerTFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
4840pF @ 30V
Power - Max:
12W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
22-VSON-CLIP (5x6)
Image CSD88599Q5DC CSD88599Q5DCT
Part Number CSD88599Q5DC CSD88599Q5DCT
Manufacturer Texas Instruments Texas Instruments
Series NexFET™ NexFET™
Package/Case 22-PowerTFDFN 22-PowerTFDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C - -
Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 30V 4840pF @ 30V
Power - Max 12W 12W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 22-VSON-CLIP (5x6) 22-VSON-CLIP (5x6)
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