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Texas Instruments CSD88537ND

Part No.:
CSD88537ND
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 60V 15A 8SOIC
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Unit Price:$0

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CSD88537ND Information

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Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
15A
Rds On (Max) @ Id, Vgs:
15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 30V
Power - Max:
2.1W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Image CSD88537ND CSD88537NDT
Part Number CSD88537ND CSD88537NDT
Manufacturer Texas Instruments Texas Instruments
Series NexFET™ NexFET™
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 15A 15A
Rds On (Max) @ Id, Vgs 15mOhm @ 8A, 10V 15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 30V 1400pF @ 30V
Power - Max 2.1W 2.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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