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Texas Instruments CSD86350Q5D

Part No.:
CSD86350Q5D
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Package:
8-PowerLDFN
Description:
MOSFET 2N-CH 25V 40A 8LSON
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CSD86350Q5D Information

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Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
40A
Rds On (Max) @ Id, Vgs:
6mOhm @ 20A, 8V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1870pF @ 12.5V
Power - Max:
13W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-LSON (5x6)
Image CSD86350Q5D CSD86350Q5DT
Part Number CSD86350Q5D CSD86350Q5DT
Manufacturer Texas Instruments Texas Instruments
Series NexFET™ -
Package/Case 8-PowerLDFN 8-PowerLDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain (Id) @ 25°C 40A 40A (Ta)
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 8V 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V 10.7nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 12.5V 1870pF @ 12.5V, 4000pF @ 12.5V
Power - Max 13W 13W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-LSON (5x6) 8-LSON (5x6)
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