Central Semiconductor Corp CP406-CWDM3011N-CT

Product attributes

Attribute value

Manufacturer:

Central Semiconductor Corp

Series:

-

Package/Case:

Die

Packaging:

Tray

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

9.93A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

13mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

1.15W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die