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Central Semiconductor Corp CP375-CWDM3011N-CT

Part No.:
CP375-CWDM3011N-CT
Manufacturer:
Central Semiconductor Corp
Category:
FETs, MOSFETs
Package:
Die
Description:
MOSFET N-CH 11A 30V BARE DIE
Quantity:

Unit Price:$0

Ext Price:$0

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CP375-CWDM3011N-CT Information

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Product attributes
Attribute value
Manufacturer:
Central Semiconductor Corp
Series:
-
Package/Case:
Die
Packaging:
Tray
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Image CP375-CWDM3011N-WN CP375-CWDM3011N-CT
Part Number CP375-CWDM3011N-WN CP375-CWDM3011N-CT
Manufacturer Central Semiconductor Corp Central Semiconductor Corp
Series - -
Package/Case Die Die
Packaging Bulk Tray
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 11A, 10V 20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 5 V 6.3 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 15 V 860 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W 2.5W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package Die Die
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