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Infineon Technologies BSG0811NDATMA1
- Part No.:
- BSG0811NDATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Description:
- MOSFET 2N-CH 25V 19A/41A TISON8
- Quantity:
Unit Price:$0
Ext Price:$0
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BSG0811NDATMA1 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Asymmetrical
- FET Feature:
- Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 19A, 41A
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100pF @ 12V
- Power - Max:
- 2.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TISON-8
| Image |  |
| Part Number | BSG0811NDATMA1 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Package/Case | 8-PowerTDFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 41A |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 12V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TISON-8 |
- Include Parts
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