Microsemi Corporation APTMC120HR11CT3G

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

SP3

Packaging:

Bulk

Product Status:

Obsolete

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

26A (Tc)

Rds On (Max) @ Id, Vgs:

98mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

3V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

62nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

950pF @ 1000V

Power - Max:

125W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP3