Microchip Technology APTMC120AM55CT1AG

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

SP1

Packaging:

Bulk

Product Status:

Last Time Buy

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

55A (Tc)

Rds On (Max) @ Id, Vgs:

49mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.2V @ 2mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

98nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

1900pF @ 1000V

Power - Max:

250W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP1