Microchip Technology APTM120H29FG

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

POWER MOS 7®

Package/Case:

SP6

Packaging:

Bulk

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

4 N-Channel (Full Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

34A

Rds On (Max) @ Id, Vgs:

348mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

374nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

10300pF @ 25V

Power - Max:

780W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP6