Microsemi Corporation APTM100H80FT1G

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

SP1

Packaging:

Bulk

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

4 N-Channel (Full Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C:

11A

Rds On (Max) @ Id, Vgs:

960mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3876pF @ 25V

Power - Max:

208W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP1