STMicroelectronics A1F25M12W2-F1

Product attributes

Attribute value

Manufacturer:

STMicroelectronics

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Not For New Designs

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

50A

Rds On (Max) @ Id, Vgs:

34mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:

4.9V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

147nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

3500pF @ 800V

Power - Max:

-

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

ACEPACK 1