YAGEO XSEMI XP2N1K2EN1

Product attributes

Attribute value

Manufacturer:

YAGEO XSEMI

Series:

XP2N1K2E

Package/Case:

SOT-723

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.2V, 2.5V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 200mA, 2.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

0.7 nC @ 2.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

44 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

150mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-723