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The APTM20UM03FAG is a high-power Full Bridge MOSFET module from Microsemi (a Microchip brand), built with advanced Linear MOSFET technology. Designed for high-efficiency power conversion, it features an ultra-low on-resistance of 3.5 mΩ and handles a continuous current of up to 515A at 200V. This module is the benchmark for industrial systems requiring compact integration and extreme power density.
Key Specification: This module integrates four MOSFETs in a full-bridge configuration within a specialized SP6 Package, offering high thermal performance and simplified busbar connection.
The APTM20UM03FAG is engineered for high-current applications where space and thermal management are critical constraints. By integrating a complete full-bridge power stage into a single module, it drastically reduces parasitic inductance compared to discrete solutions, enabling faster switching and higher system efficiency.
This module is particularly favored in Motor Control and Uninterruptible Power Supplies (UPS) due to its ruggedness and ease of mounting. The internal layout is optimized for symmetrical current sharing, ensuring long-term reliability in demanding 24/7 industrial environments.
Microsemi Corporation, a wholly-owned subsidiary of Microchip Technology Inc., is a premier supplier of high-performance semiconductor solutions. They are globally recognized for their leadership in power electronics, particularly in high-reliability aerospace, defense, and industrial markets.
Microsemi's power modules are known for their advanced packaging technology and high-current silicon integration, helping engineers solve complex thermal and mechanical challenges in modern power system design.
Minimizes conduction losses, significantly improving overall system efficiency and reducing cooling requirements.
Simplifies PCB layout and reduces component count by housing four high-power MOSFETs in one module.
Supports up to 515A (Tc=25°C), making it suitable for heavy-duty industrial welding and motor drives.
Improves switching performance and reduces noise interference by providing a dedicated return path for the gate signal.
The APTM20UM03FAG utilizes the SP6 Package (often referred to as SP6-P). This package is designed for high-power density with an AlN substrate for superior thermal conductivity.
As a Full Bridge module, the APTM20UM03FAG provides dedicated terminals for the DC input, AC output, and gate control signals.
| Part Number | APTM20UM03FAG |
|---|---|
| Manufacturer | Microsemi (Microchip) |
| Drain-Source Voltage ($V_{DSS}$) | 200 V |
| Continuous Drain Current ($I_D$) | 515 A (@ Tc=25°C) |
| On-Resistance ($R_{DS(on)}$) | 3.5 mΩ (Max) |
| Total Gate Charge ($Q_g$) | 1120 nC |
| Configuration | Full Bridge |
| Package Style | SP6 (SP6-P) |
Based on image_f93018.jpg, several functional equivalents exist for the APTM20UM03FAG. Engineers should verify terminal spacing and gate drive characteristics before selection.
Ideal for high-current traction motors and heavy-duty industrial fans/pumps.
Provides stable and high-current output for arc welding and plasma cutting machines.
Core power stage for high-capacity uninterruptible power supplies in data centers.
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