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    Microchip Technology APTM20UM03FAG

    Part No.:
    APTM20UM03FAG
    Manufacturer:
    Microchip Technology
    Category:
    Single FETs, MOSFETs
    Package:
    SP6
    Description:
    MOSFET N-CH 200V 580A SP6
    Quantity:

    Unit Price:$0

    Ext Price:$0

    Payment:
    Payment
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    Product Details

    APTM20UM03FAG - Microsemi 200V 515A Full Bridge MOSFET Power Module

    The APTM20UM03FAG is a high-power Full Bridge MOSFET module from Microsemi (a Microchip brand), built with advanced Linear MOSFET technology. Designed for high-efficiency power conversion, it features an ultra-low on-resistance of 3.5 mΩ and handles a continuous current of up to 515A at 200V. This module is the benchmark for industrial systems requiring compact integration and extreme power density.

    Key Specification: This module integrates four MOSFETs in a full-bridge configuration within a specialized SP6 Package, offering high thermal performance and simplified busbar connection.

     

    Product Overview

    The APTM20UM03FAG is engineered for high-current applications where space and thermal management are critical constraints. By integrating a complete full-bridge power stage into a single module, it drastically reduces parasitic inductance compared to discrete solutions, enabling faster switching and higher system efficiency.

    This module is particularly favored in Motor Control and Uninterruptible Power Supplies (UPS) due to its ruggedness and ease of mounting. The internal layout is optimized for symmetrical current sharing, ensuring long-term reliability in demanding 24/7 industrial environments.

    SEO Engineering Insight: The 200V rating makes the APTM20UM03FAG ideal for 48V-96V battery systems, providing ample headroom for voltage spikes in EV charging and renewable energy storage.
     

    About Microsemi (Microchip Technology)

    Microsemi Corporation, a wholly-owned subsidiary of Microchip Technology Inc., is a premier supplier of high-performance semiconductor solutions. They are globally recognized for their leadership in power electronics, particularly in high-reliability aerospace, defense, and industrial markets.

    Microsemi's power modules are known for their advanced packaging technology and high-current silicon integration, helping engineers solve complex thermal and mechanical challenges in modern power system design.

     

    Key Advantages

    Ultra-Low $R_{DS(on)}$ (3.5 mΩ)

    Minimizes conduction losses, significantly improving overall system efficiency and reducing cooling requirements.

    Full Bridge Integration

    Simplifies PCB layout and reduces component count by housing four high-power MOSFETs in one module.

    High Current Capacity

    Supports up to 515A (Tc=25°C), making it suitable for heavy-duty industrial welding and motor drives.

    Kelvin Source for Gate Drive

    Improves switching performance and reduces noise interference by providing a dedicated return path for the gate signal.

     

    Package & Mechanical Details

    The APTM20UM03FAG utilizes the SP6 Package (often referred to as SP6-P). This package is designed for high-power density with an AlN substrate for superior thermal conductivity.

    APTM20UM03FAG Module Package
    Assembly Notes: 
    • Mounting: Low profile package for direct heatsink mounting with optimized screw positions.
    • Isolation: Features 2500V isolation voltage from terminals to the baseplate.
    • Terminals: High-current screw terminals for reliable busbar or heavy-gauge wire connections.
     

    Pin Functions & Terminal Map

    As a Full Bridge module, the APTM20UM03FAG provides dedicated terminals for the DC input, AC output, and gate control signals.

    V+ / V-
    Main DC Bus input terminals. Recommended for low-inductance busbar connection.
    A / B
    AC output terminals representing the center points of the two half-bridge legs.
    G1 - G4
    Gate drive inputs for the four internal MOSFETs.
    S1 - S4
    Kelvin Source terminals for precise and clean gate driving.
     

    Key Specifications (@ Tj = 25°C)

    Part Number APTM20UM03FAG
    Manufacturer Microsemi (Microchip)
    Drain-Source Voltage ($V_{DSS}$) 200 V
    Continuous Drain Current ($I_D$) 515 A (@ Tc=25°C)
    On-Resistance ($R_{DS(on)}$) 3.5 mΩ (Max)
    Total Gate Charge ($Q_g$) 1120 nC
    Configuration Full Bridge
    Package Style SP6 (SP6-P)
     

    Equivalent & Replacement Guide

    Based on image_f93018.jpg, several functional equivalents exist for the APTM20UM03FAG. Engineers should verify terminal spacing and gate drive characteristics before selection.

    • MD680SGN100B3S (Starpower): A high-performance Functional Equivalent MOSFET module from Starpower, widely used in industrial motor drives.
    • MD630HFN150B3S (Starpower): Suitable for applications requiring different voltage/current trade-offs in a similar module footprint.
    • XNM700B03KA (Xiner): A compatible Chinese-domestic alternative for cost-sensitive power conversion projects.
    Procurement Tip: Starpower modules often serve as reliable drop-in or functional alternatives when Microsemi lead times are extended.
     

    Typical Applications

    Motor Control

    AC/DC Motor Drives

    Ideal for high-current traction motors and heavy-duty industrial fans/pumps.

    Welding

    Industrial Welding

    Provides stable and high-current output for arc welding and plasma cutting machines.

    UPS

    UPS Systems

    Core power stage for high-capacity uninterruptible power supplies in data centers.

     

    Quality & Authenticity

    • Traceability: Full manufacturer lot code and date code tracking to ensure genuine Microsemi hardware.
    • Thermal Testing: 100% tested for isolation voltage and thermal contact integrity.
    • Packaging: Shipped in anti-static, shock-resistant industrial module trays.
     

    Technical FAQ

    Does this module include internal thermistors for temperature monitoring?
    Please check the specific suffix; most "FAG" versions include a built-in NTC thermistor for real-time monitoring of the baseplate temperature to prevent thermal runaway.
    Can I parallel multiple APTM20UM03FAG modules?
    Yes, the MOSFET technology inherently allows for paralleling. However, symmetrical busbar layout and matched gate drive signals are required to ensure balanced current sharing.
     

    Disclaimer

    Notice: Technical information provided here is for reference only. For system-level design and safety-critical qualification, always refer to the official Microsemi APTM20UM03FAG datasheet.

    APTM20UM03FAG Information

    • Specifications
    • Tags
    Product attributes
    Attribute value
    Manufacturer:
    Microchip Technology
    Series:
    POWER MOS 7®
    Package/Case:
    SP6
    Packaging:
    Bulk
    Product Status:
    Active
    FET Type:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    200 V
    Current - Continuous Drain (Id) @ 25°C:
    580A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    10V
    Rds On (Max) @ Id, Vgs:
    3.6mOhm @ 290A, 10V
    Vgs(th) (Max) @ Id:
    5V @ 15mA
    Gate Charge (Qg) (Max) @ Vgs:
    840 nC @ 10 V
    Vgs (Max):
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds:
    43300 pF @ 25 V
    FET Feature:
    -
    Power Dissipation (Max):
    2270W (Tc)
    Operating Temperature:
    -40°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Chassis Mount
    Supplier Device Package:
    SP6
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