Renesas Electronics Corporation UPA2680T1E-E2-AT

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

6-VDFN Exposed Pad

Packaging:

Bulk

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

50mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

3.1 nC @ 4.5 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

190 pF @ 10 V

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-MLP (3x3)