Toshiba Semiconductor and Storage TTD1409B,S4X

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

Transistor Type:

NPN - Darlington

Current - Collector (Ic) (Max):

6 A

Voltage - Collector Emitter Breakdown (Max):

400 V

Vce Saturation (Max) @ Ib, Ic:

2V @ 40mA, 4A

Current - Collector Cutoff (Max):

20µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

600 @ 2A, 2V

Power - Max:

2 W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220SIS