Taiwan Semiconductor Corporation TSM2309CX

Product attributes

Attribute value

Manufacturer:

Taiwan Semiconductor Corporation

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

190mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.2 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

425 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

1.56W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23