Taiwan Semiconductor Corporation TSM126CX RFG

Product attributes

Attribute value

Manufacturer:

Taiwan Semiconductor Corporation

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

FET Type:

N-Channel, Depletion Mode

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

30mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

0V, 10V

Rds On (Max) @ Id, Vgs:

800Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id:

1V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:

1.18 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

51.42 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23