Toshiba Semiconductor and Storage TRS6V65H,LQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

4-VSFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):

650 V

Current - Average Rectified (Io):

6A

Voltage - Forward (Vf) (Max) @ If:

1.35 V @ 6 A

Speed:

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):

0 ns

Current - Reverse Leakage @ Vr:

70 µA @ 650 V

Capacitance @ Vr, F:

392pF @ 1V, 1MHz

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-DFN-EP (8x8)

Operating Temperature - Junction:

175°C