Taiwan Semiconductor Corporation TQM110NB04DCR RLG

Product attributes

Attribute value

Manufacturer:

Taiwan Semiconductor Corporation

Series:

-

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 50A (Tc)

Rds On (Max) @ Id, Vgs:

11mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1354pF @ 20V

Power - Max:

2.5W (Ta), 58W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

8-PDFNU (5x6)