Texas Instruments TPS1101DR

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

15 V

Current - Continuous Drain (Id) @ 25°C:

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.7V, 10V

Rds On (Max) @ Id, Vgs:

90mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11.25 nC @ 10 V

Vgs (Max):

+2V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

791mW (Ta)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOIC