Toshiba Semiconductor and Storage TPH9R00CQ5,LQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSX-H

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

9mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

44 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5400 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

210W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5)