Toshiba Semiconductor and Storage TPH1R712MD,L1Q

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVI

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

1.7mOhm @ 30A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

182 nC @ 5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

10900 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

78W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5)