Toshiba Semiconductor and Storage TPCP8003-H(TE85L,F

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIII-H

Package/Case:

8-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

180mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

7.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

360 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

840mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PS-8 (2.9x2.4)