Toshiba Semiconductor and Storage TPCF8A01(TE85L)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIII

Package/Case:

8-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2V, 4.5V

Rds On (Max) @ Id, Vgs:

49mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:

7.5 nC @ 5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

590 pF @ 10 V

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

330mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

VS-8 (2.9x1.5)