Toshiba Semiconductor and Storage TPC8035-H(TE12L,QM

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVI-H

Package/Case:

8-SOIC (0.173", 4.40mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.2mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

82 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7800 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP (5.5x6.0)