Toshiba Semiconductor and Storage TPC6110(TE85L,F,M)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVI

Package/Case:

SOT-23-6 Thin, TSOT-23-6

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

56mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

14 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

510 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

700mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

VS-6 (2.9x2.8)