Toshiba Semiconductor and Storage TPC6107(TE85L,F,M)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIV

Package/Case:

SOT-23-6 Thin, TSOT-23-6

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2V, 4.5V

Rds On (Max) @ Id, Vgs:

55mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:

9.8 nC @ 5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

680 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

700mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

VS-6 (2.9x2.8)