Transphorm TP65H480G4JSG

Product attributes

Attribute value

Manufacturer:

Transphorm

Series:

SuperGaN®

Package/Case:

3-PowerTDFN

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V

Rds On (Max) @ Id, Vgs:

560mOhm @ 3.4A, 8V

Vgs(th) (Max) @ Id:

2.8V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

9 nC @ 8 V

Vgs (Max):

±18V

Input Capacitance (Ciss) (Max) @ Vds:

760 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

13.2W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

3-PQFN (5x6)