Toshiba Semiconductor and Storage TK7J90E,S1E

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

π-MOSVIII

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

900 V

Current - Continuous Drain (Id) @ 25°C:

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:

32 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1350 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

200W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)