Toshiba Semiconductor and Storage TK18E10K3,S1X(S

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIV

Package/Case:

TO-220-3

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

42mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

33 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-3