Toshiba Semiconductor and Storage TK12E60W,S1VX

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

DTMOSIV

Package/Case:

TO-220-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

300mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:

3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:

25 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

890 pF @ 300 V

FET Feature:

-

Power Dissipation (Max):

110W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220