Toshiba Semiconductor and Storage TK110A10PL,S4X

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

10.8mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:

33 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2040 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

36W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220SIS