Toshiba Semiconductor and Storage TK10J80E,S1E

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

π-MOSVIII

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800 V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

46 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

2000 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)