Toshiba Semiconductor and Storage TBC857B,LM

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Active

Transistor Type:

PNP

Current - Collector (Ic) (Max):

150 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Vce Saturation (Max) @ Ib, Ic:

650mV @ 100mA, 5mA

Current - Collector Cutoff (Max):

30nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

210 @ 2mA, 5V

Power - Max:

320 mW

Frequency - Transition:

80MHz

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3