STMicroelectronics STW68N65DM6-4AG

Product attributes

Attribute value

Manufacturer:

STMicroelectronics

Series:

MDmesh™

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

118 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

5900 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

480W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4