Toshiba Semiconductor and Storage SSM6N62TU,LXHF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

6-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate, 1.2V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

800mA (Ta)

Rds On (Max) @ Id, Vgs:

85mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

177pF @ 10V

Power - Max:

500mW (Ta)

Operating Temperature:

150°C

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

UF6