Toshiba Semiconductor and Storage SSM6K518NU,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

6-WDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Rds On (Max) @ Id, Vgs:

33mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

3.6 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

410 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-UDFNB (2x2)