Toshiba Semiconductor and Storage SSM6J206FE(TE85L,F

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4V

Rds On (Max) @ Id, Vgs:

130mOhm @ 1A, 4V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

335 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6