Toshiba Semiconductor and Storage SSM5H08TU,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIII

Package/Case:

6-SMD (5 Leads), Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4V

Rds On (Max) @ Id, Vgs:

160mOhm @ 750mA, 4V

Vgs(th) (Max) @ Id:

1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

125 pF @ 10 V

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

UFV