Toshiba Semiconductor and Storage SSM3K7002KF,LXHF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id:

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.6 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

40 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

270mW (Ta)

Operating Temperature:

150°C

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

S-Mini