Toshiba Semiconductor and Storage SSM3K59CTB,L3F

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVII-H

Package/Case:

3-SMD, No Lead

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 8V

Rds On (Max) @ Id, Vgs:

215mOhm @ 1A, 8V

Vgs(th) (Max) @ Id:

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1.1 nC @ 4.2 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

130 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

CST3B