Toshiba Semiconductor and Storage SSM3K01T(TE85L,F)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

π-MOSVI

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4V

Rds On (Max) @ Id, Vgs:

120mOhm @ 1.6A, 4V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

152 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TSM