Vishay Siliconix SQUN702E-T1_GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel, Common Drain

FET Feature:

-

Drain to Source Voltage (Vdss):

40V, 200V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc), 20A (Tc)

Rds On (Max) @ Id, Vgs:

9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA, 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V

Input Capacitance (Ciss) (Max) @ Vds:

1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V

Power - Max:

48W (Tc), 60W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

Die